| PART |
Description |
Maker |
| BUV22-D BUV22/D |
8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI", active CAN
Power 40A 250V NPN TO204
SWITCHMODE Series NPN Silicon Power Transistor
|
ON Semiconductor
|
| CDST-21-G CDST-21A-G CDST-21C-G CDST-21S-G |
Switching Diodes Array, V-RRM=250V, V-R=250V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
| BUR52 |
Trans GP BJT NPN 250V 60A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| CIL9263 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 75 - hFE
|
Continental Device India Limited
|
| 5ST125-R 5STP400-R 5STP160-R 5ST5-R 5STP3.15-R 5ST |
Fuses, RoHS 125mA 250V T IEC GLASS 5X20 TIME LAG BLOW ELECTRIC FUSE, 0.125A, 250VAC, 35A (IR), INLINE/HOLDER
Fuses, RoHS 400mA 250V T IEC GLASS LEAD TIME LAG BLOW ELECTRIC FUSE, 0.4A, 250VAC, 35A (IR), THROUGH HOLE
Fuses, RoHS 160mA 250V T IEC GLASS LEAD TIME LAG BLOW ELECTRIC FUSE, 0.16A, 250VAC, 35A (IR), THROUGH HOLE
Fuses, RoHS 5A 250V T IEC GLASS 5X20
Fuses, RoHS 3.15A 250V T IEC GLASS LEAD
Fuses, RoHS 125mA 250V T IEC GLASS LEAD
Fuses, RoHS 63mA 250V T IEC GLASS LEAD
Fuses, RoHS 630mA 250V T IEC GLASS LEAD
Fuses, RoHS 5A 250V T IEC GLASS LEAD
Fuses, RoHS 800mA 250V T IEC GLASS 5X20
|
Bel Fuse, Inc.
BEL FUSE INC
|
| IRFP244 |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=15A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.28ohm，身份证\u003d 15A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFN214B IRFN214BTAFP001 |
250V N-Channel B-FET
250V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM214B IRFM214BTFFP001 |
250V N-Channel B-FET / Substitute of IRFM214A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA16N25C |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC5759 |
Silicon NPN Transistor
Silicon NPN Epitaxial UHF / VHF wide band amplifier
From old datasheet system
|
Hitachi Semiconductor
|
